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| BTA202X series D and E 2 A Three-quadrant triacs high commutation Rev. 01 -- 7 February 2008 Product data sheet 1. Product profile 1.1 General description Passivated high commutation triacs in a SOT186A `full pack' plastic package. These triacs balance the requirements of commutation performance and gate sensitivity. The `sensitive' gate E series and `logic level' D series are intended for interfacing with low-power drivers, including microcontrollers. 1.2 Features I Sensitive gate I Very high commutation performance maximized at each gate sensitivity I High immunity to dV/dt I High isolation voltage 1.3 Applications I Motor control I Solenoid driver 1.4 Quick reference data I I I I I VDRM 600 V (BTA202X-600D) VDRM 600 V (BTA202X-600E) VDRM 800 V (BTA202X-800D) VDRM 800 V (BTA202X-800E) IT(RMS) 2 A I I I I IGT 5 mA (BTA202X-600D) IGT 10 mA (BTA202X-600E) IGT 5 mA (BTA202X-800D) IGT 10 mA (BTA202X-800E) NXP Semiconductors BTA202X series D and E 2 A Three-quadrant triacs high commutation 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description main terminal 1 (T1) main terminal 2 (T2) gate (G) mounting base (isolated) mb T2 sym051 Simplified outline Graphic symbol T1 G 123 SOT186A (TO-220F) 3. Ordering information Table 2. Ordering information Package Name BTA202X-600D BTA202X-600E BTA202X-800D BTA202X-800E TO-220F Description Version plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A 3-lead TO-220 `full pack' Type number 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM IT(RMS) ITSM Parameter repetitive peak off-state voltage RMS on-state current non-repetitive peak on-state current Conditions BTA202X-600D; BTA202X-600E BTA202X-800D; BTA202X-800E full sine wave; Th 110 C; see Figure 4 and 5 full sine wave; Tj = 25 C prior to surge; see Figure 2 and 3 t = 20 ms t = 16.7 ms I2t dIT/dt IGM PGM I2t for fusing tp = 10 ms ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/s rate of rise of on-state current peak gate current peak gate power 14 15.4 0.98 100 2 5 A A A2s A/s A W [1] Min - Max 600 800 2 Unit V V A BTA202X_SER_D_E_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 7 February 2008 2 of 12 NXP Semiconductors BTA202X series D and E 2 A Three-quadrant triacs high commutation Table 3. Limiting values ...continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PG(AV) Tstg Tj [1] Parameter average gate power storage temperature junction temperature Conditions over any 20 ms period Min -40 - Max 0.5 +150 125 Unit W C C Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/s. 3 Ptot (W) conduction angle (degrees) 30 60 90 120 180 form factor a 4 2.8 2.2 1.9 1.57 003aac112 = 180 120 90 2 60 30 1 0 0 0.4 0.8 1.2 1.6 IT(RMS) (A) 2 = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 003aac110 20 ITSM (A) 16 12 8 IT ITSM t 1/f Tj(init) = 25 C max 4 0 1 10 102 number of cycles 103 f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA202X_SER_D_E_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 7 February 2008 3 of 12 NXP Semiconductors BTA202X series D and E 2 A Three-quadrant triacs high commutation 103 ITSM (A) IT 003aac113 ITSM t tp Tj(init) = 25 C max 102 (1) 10 10-5 10-4 10-3 10-2 tp ( s) 10-1 tp 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values 003aac111 003aac109 10 IT(RMS) (A) 8 3 IT(RMS) (A) 2 6 4 1 2 0 10-2 10-1 1 10 surge duration (s) 0 -50 0 50 100 Th (C) 150 f = 50 Hz; Th = 110 C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of heatsink temperature; maximum values BTA202X_SER_D_E_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 7 February 2008 4 of 12 NXP Semiconductors BTA202X series D and E 2 A Three-quadrant triacs high commutation 5. Thermal characteristics Table 4. Symbol Rth(j-h) Rth(j-a) Thermal characteristics Parameter Conditions Min Typ 55 Max 5.5 Unit K/W K/W thermal resistance from junction to bidirectional; see heatsink Figure 6 thermal resistance from junction to in free air ambient 10 Zth(j-h) (K/W) 1 001aah553 10-1 P 10-2 10-5 tp t 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse width 6. Isolation characteristics Table 5. Isolation limiting values and characteristics Th = 25 C unless otherwise specified. Symbol Visol(RMS) Parameter Conditions Min Typ Max 2500 Unit V RMS isolation voltage from all three terminals to external heatsink; f = 50 Hz to 60 Hz; sinusoidal waveform; RH 65 %; clean and dust free isolation capacitance from pin 2 to external heatsink; f = 1 MHz Cisol - 10 - pF BTA202X_SER_D_E_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 7 February 2008 5 of 12 NXP Semiconductors BTA202X series D and E 2 A Three-quadrant triacs high commutation 7. Static characteristics Table 6. Static characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions BTA202X-600D BTA202X-800D Min IGT gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8 T2+ G+ T2+ G- T2- G- IL latching current VD = 12 V; IGT = 0.1 A; see Figure 10 T2+ G+ T2+ G- T2- G- IH VT VGT holding current on-state voltage gate trigger voltage VD = 12 V; IGT = 0.1 A; see Figure 11 IT = 3 A; see Figure 9 VD = 12 V; IT = 0.1 A; see Figure 7 VD = 400 V; IT = 0.1 A; Tj = 125 C ID off-state current VD = VDRM(max); Tj = 125 C 0.2 1.63 0.7 0.3 0.1 5 10 5 5 2 1.5 0.5 0.2 1.63 0.7 0.3 0.1 12 20 12 12 2 1.5 0.5 mA mA mA mA V V V mA 0.25 0.25 0.25 5 5 5 0.5 0.5 0.5 10 10 10 mA mA mA Typ Max BTA202X-600E BTA202X-800E Min Typ Max Unit BTA202X_SER_D_E_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 7 February 2008 6 of 12 NXP Semiconductors BTA202X series D and E 2 A Three-quadrant triacs high commutation 8. Dynamic characteristics Table 7. Dynamic characteristics Conditions BTA202X-600D BTA202X-800D Min dVD/dt rate of rise of off-state voltage VDM = 0.67 x VDRM(max); Tj = 125 C; exponential waveform; R(G-MT1) = 220 1.0 1.2 Typ 350 2 Max BTA202X-600E BTA202X-800E Min 2.0 2.3 Typ 500 2 Max V/s A/ms A/ms s Unit Symbol Parameter dIcom/dt rate of change of VDM = 400 V; Tj = 125 C; IT(RMS) = 2 A; commutating dVcom/dt = 20 V/s; gate open circuit current VDM = 400 V; Tj = 125 C; IT(RMS) = 2 A; dVcom/dt = 10 V/s; gate open circuit tgt gate-controlled turn-on time ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s 1.6 VGT VGT(25C) 1.2 001aab101 3 IGT IGT(25C) 2 (1) (2) (3) 003aaa959 0.8 1 (3) (2) (1) 0.4 -50 0 50 100 Tj (C) 150 0 -50 0 50 100 Tj (C) 150 (1) T2- G- (2) T2+ G- (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature BTA202X_SER_D_E_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 7 February 2008 7 of 12 NXP Semiconductors BTA202X series D and E 2 A Three-quadrant triacs high commutation 3 IT (A) 003aac108 3 IL IL(25C) 001aab100 2 2 (1) (2) (3) 1 1 0 0 1 2 VT (V) 3 0 -50 0 50 100 Tj (C) 150 Vo = 0.9 V Rs = 0.267 (1) Tj = 125C; typical values (2) Tj = 125 C; maximum values (3) Tj = 25 C; maximum values Fig 9. On-state current as a function of on-state voltage 3 IH IH(25C) 2 Fig 10. Normalized latching current as a function of junction temperature 001aab099 1 0 -50 0 50 100 Tj (C) 150 Fig 11. Normalized holding current as a function of junction temperature 9. Package information Refer to mounting instructions for F-pack packages. Epoxy meets UL94 V-0 at 3.175 mm. BTA202X_SER_D_E_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 7 February 2008 8 of 12 NXP Semiconductors BTA202X series D and E 2 A Three-quadrant triacs high commutation 10. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E P q D1 T mounting base A A1 D j L2 b1 L b2 L1 K Q 1 2 b e e1 3 wM c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.0 A1 2.9 2.5 b 0.9 0.7 b1 1.1 0.9 b2 1.4 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.5 6.3 E 10.3 9.7 e 2.54 e1 5.08 j 2.7 1.7 K 0.6 0.4 L L1 L2 max. 3 (1) P 3.2 3.0 Q 2.6 2.3 q 3.0 2.6 T (2) w 0.4 14.4 3.30 13.5 2.79 2.5 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are 2.5 x 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC 3-lead TO-220F JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 Fig 12. Package outline SOT186A (3-lead TO-220F) BTA202X_SER_D_E_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 7 February 2008 9 of 12 NXP Semiconductors BTA202X series D and E 2 A Three-quadrant triacs high commutation 11. Revision history Table 8. Revision history Release date 20080207 Data sheet status Product data sheet Change notice Supersedes Document ID BTA202X_SER_D_E_1 BTA202X_SER_D_E_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 7 February 2008 10 of 12 NXP Semiconductors BTA202X series D and E 2 A Three-quadrant triacs high commutation 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.3 Disclaimers Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BTA202X_SER_D_E_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 7 February 2008 11 of 12 NXP Semiconductors BTA202X series D and E 2 A Three-quadrant triacs high commutation 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Isolation characteristics . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Package information . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 February 2008 Document identifier: BTA202X_SER_D_E_1 |
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